| PART |
Description |
Maker |
| V436516Z04VTG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic Corp
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| V436516S04VATG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V436616Y24VATG-75 |
3.3 VOLT 16M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V54C365404VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4
|
Mosel Vitelic Corp
|
| V54C365404VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| V436516R04VATG-75 |
3.3 VOLT 16M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A.
ETC[ETC]
|
| AT45DB161B |
16M bit, 2.7-Volt Only Serial-Interface Flash with Two 528-Byte SRAM Buffers
|
Atmel
|
| R01AN1504EJ0100 |
Using the DTC to Perform Continuous Clock
|
Renesas Electronics Corporation
|
